Display device and method for manufacturing display device

Abstract

Provided is a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an outer boundary of a pixel area; a transistor connected to the signal line; a first electrode extending across the pixel area and formed on the signal line and the transistor, and connected to the transistor, the first electrode having a first portion overlying only the signal line and the transistor, and a second portion comprising all of the first electrode not included in the first portion; a pixel defining layer formed on only the first portion of the first electrode; an organic emission layer formed on substantially the entire second portion but not on the first portion; and a second electrode formed on the pixel defining layer and the organic emission layer.

Claims

What is claimed is: 1. A display device, comprising: a substrate; signal lines disposed on the substrate, the signal lines including a gate line, a data line, and a driving voltage line, the signal lines collectively defining an outer boundary of a pixel area; a transistor connected to at least one of the signal lines; a first electrode extending across the pixel area, the first electrode disposed on the signal lines and the transistor and connected to the transistor, the first electrode having a first portion overlying only the signal lines and the transistor, and a second portion comprising all of the first electrode not included in the first portion; a pixel defining layer disposed on only the first portion of the first electrode; an organic emission layer disposed on substantially the entire second portion but not on the first portion; and a second electrode disposed on the pixel defining layer and the organic emission layer. 2. The display device of claim 1 , wherein: the organic emission layer is not disposed on the pixel defining layer. 3. The display device of claim 1 , further comprising: a first capacitor electrode and a second capacitor electrode disposed on the substrate and overlapping each other with a first insulating layer therebetween, wherein the organic emission layer overlaps the first capacitor electrode and the second capacitor electrode, and the pixel defining layer does not overlap either the first capacitor electrode or the second capacitor electrode. 4. The display device of claim 3 , wherein the transistor includes: a semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer, wherein the gate electrode includes a first layer and a second layer positioned on the first layer, the first capacitor electrode is formed on the same layer as the semiconductor layer of the transistor, the second capacitor electrode is formed on the same layer as the first layer of the gate electrode of the transistor, and the first insulating layer is the gate insulating layer. 5. The display device of claim 4 , wherein: the first layer of the gate electrode includes a transparent conductor, and the second layer of the gate electrode includes a low-resistive conductor. 6. The display device of claim 5 , wherein: the organic emission layer is not disposed on the pixel defining layer. 7. The display device of claim 3 , wherein: the organic emission layer is not disposed on the pixel defining layer. 8. The display device of claim 1 , further comprising: a first capacitor electrode and a second capacitor electrode formed on the substrate and overlapping each other with a first insulating layer therebetween, wherein the organic emission layer does not overlap either the first capacitor electrode or the second capacitor electrode, and the pixel defining layer overlaps the first capacitor electrode and the second capacitor electrode. 9. The display device of claim 8 , wherein the transistor includes: a semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer, wherein the first capacitor electrode is formed on the same layer as the semiconductor layer of the transistor, the second capacitor electrode is formed on the same layer as the gate electrode of the transistor, and the first insulating layer is the gate insulating layer. 10. The display device of claim 9 , further comprising: a third capacitor electrode overlapping the first capacitor electrode and the second capacitor electrode, wherein the first capacitor electrode and the second capacitor electrode overlap each other with the first insulating layer therebetween, so as to form a first storage capacitor, and the second capacitor electrode and the third capacitor electrode overlap each other with the second insulating layer therebetween, so as to form a second storage capacitor. 11. The display device of claim 10 , wherein: the organic emission layer is not disposed on the pixel defining layer. 12. The display device of claim 9 , wherein: the organic emission layer is not disposed on the pixel defining layer. 13. A method of manufacturing a display device, comprising: forming signal lines on a substrate, the signal lines including a gate line, a data line, and a driving voltage line collectively defining an outer boundary of a pixel area; forming a transistor on the substrate, the transistor being connected to at least one of the signal lines; forming a first electrode extending across the pixel area, the first electrode being connected to the transistor and disposed on the signal lines and the transistor, the first electrode further having a first portion and a second portion, the first portion overlying only the signal lines and the transistor, and the second portion comprising all of the first electrode not included in the first portion; forming a pixel defining layer on only the first portion of the first electrode; forming an organic emission layer disposed on substantially the entire second portion but not on the first portion; and forming a second electrode on the pixel defining layer and the organic emission layer. 14. The manufacturing method of a display device of claim 13 , wherein: the organic emission layer is not formed on the pixel defining layer. 15. The manufacturing method of a display device of claim 13 , further comprising: forming a first capacitor electrode and a second capacitor electrode on the substrate, the first capacitor electrode and second capacitor electrode overlapping each other with a first insulating layer therebetween, wherein the organic emission layer overlaps the first capacitor electrode and the second capacitor electrode, and the pixel defining layer does not overlap either the first capacitor electrode or the second capacitor electrode. 16. The manufacturing method of a display device of claim 15 , wherein the forming a transistor further includes: forming a semiconductor layer on the substrate, forming a gate insulating layer on the semiconductor layer, and forming a gate electrode on the gate insulating layer, wherein the gate electrode includes a first layer and a second layer positioned on the first layer, the first capacitor electrode is formed on the same layer as the semiconductor layer of the transistor, and the second capacitor electrode is formed on the same layer as the first layer of the gate electrode of the transistor. 17. The manufacturing method of a display device of claim 16 , wherein: the first layer of the gate electrode includes a transparent conductor, and the second layer of the gate electrode includes a low-resistive conductor. 18. The manufacturing method of a display device of claim 17 , wherein: the organic emission layer is not formed on the pixel defining layer. 19. The manufacturing method of a display device of claim 15 , wherein: the organic emission layer is not formed on the pixel defining layer. 20. The manufacturing method of a display device of claim 13 , further comprising: forming a first capacitor electrode and a second capacitor electrode on the substrate, the first capacitor electrode and the second capacitor electrode overlapping each other with a first insulating layer therebetween, wherein the organic emission layer does not overlap either the first capacitor electrode or the second capacitor electrode, and the pixel defining layer overlaps the first capacitor electrode and the second capacitor electrode. 21. The manufacturing method of a display device of claim 20 , wherein the forming a transistor further includes: forming a semiconductor layer on the substrate, forming a gate insulating layer on the semiconductor layer, and forming a gate electrode on the gate insulating layer, wherein the first capacitor electrode is formed on the same layer as the semiconductor layer of the transistor, and the second capacitor electrode is formed on the same layer as the gate electrode of the transistor. 22. The manufacturing method of a display device of claim 21 , further comprising: forming a third capacitor electrode overlapping the first capacitor electrode and the second capacitor electrode, wherein the first capacitor electrode and the second capacitor electrode overlap each other with the first insulating layer therebetween, so as to form a first storage capacitor, and the second capacitor electrode and the third capacitor electrode overlap each other with the second insulating layer therebetween, so as to form a second storage capacitor. 23. The manufacturing method of a display device of claim 22 , wherein: the organic emission layer is not formed on the pixel defining layer. 24. The manufacturing method of a display device of claim 21 , wherein: the organic emission layer is not formed on the pixel defining layer.
CROSS-REFERENCE TO RELATED APPLICATION This application claims priority to, and the benefit of, Korean Patent Application No. 10-2013-0069111 filed in the Korean Intellectual Property Office on Jun. 17, 2013, the entire contents of which are incorporated herein by reference. BACKGROUND (a) Technical Field Embodiments of the present invention relate generally to display devices and their manufacture. More specifically, embodiments of the present invention relate to displays having increased emissive area. (b) Description of the Related Art A display device is a device displaying an image, and recently, an organic light emitting diode display has received attention as being potentially attractive for use in modern display devices. Since the organic light emitting diode display has a self-emission characteristic and does not require a separate light source unlike a liquid crystal display device, it is possible to reduce the display's thickness and weight as compared to liquid crystal display devices. Further, the organic light emitting diode display has characteristics such as low power consumption, high luminance, and a high response speed. An organic light emitting diode display in the related art includes an organic emission layer formed in a pixel area which does not overlap with a signal line. As an area of the organic emission layer is increased, an emission area of the display device is increased, thus increasing luminance. However, when the organic emission layer is formed to overlap with the signal line in order to increase emission area, emission efficiency of the organic emission layer is reduced. The above information disclosed in this Background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art. SUMMARY The present invention has been made in an effort to provide a display device and a manufacturing method therefor, the display device having advantages of preventing deterioration of emission efficiency while also increasing an emission area of the display device. An exemplary embodiment of the present invention provides a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an outer boundary of a pixel area; a transistor connected to the signal line; a first electrode extending across the pixel area, formed on the signal line and the transistor, and connected to the transistor, the first electrode having a first portion overlying only the signal line and the transistor, and a second portion comprising all of the first electrode not included in the first portion; a pixel defining layer formed on only the first portion of the first electrode; an organic emission layer formed on substantially the entire second portion but not on the first portion; and a second electrode formed on the pixel defining layer and the organic emission layer. The organic emission layer may not be formed on the pixel defining layer. The display device may further include a first capacitor electrode and a second capacitor electrode formed on the substrate and overlapping each other with a first insulating layer therebetween, in which the organic emission layer may overlap the first capacitor electrode and the second capacitor electrode, and the pixel defining layer may not overlap either the first capacitor electrode or the second capacitor electrode. The transistor may include a semiconductor layer, a gate insulating layer formed on the semiconductor layer, and a gate electrode formed on the gate insulating layer, in which the gate electrode may include a first layer and a second layer positioned on the first layer, the first capacitor electrode may be formed on the same layer as the semiconductor layer of the transistor, the second capacitor electrode may be formed on the same layer as the first layer of the gate electrode of the transistor, and the first insulating layer may be the gate insulating layer. The first layer of the gate electrode may include a transparent conductor, and the second layer of the gate electrode may include a low-resistive conductor. The display device may further include a first capacitor electrode and a second capacitor electrode formed on the substrate and overlapping other with a first insulating layer therebetween, in which the organic emission layer may not overlap either the first capacitor electrode or the second capacitor electrode, and the pixel defining layer may overlap the first capacitor electrode and the second capacitor electrode. The transistor may include a semiconductor layer, a gate insulating layer formed on the semiconductor layer, and a gate electrode formed on the gate insulating layer, in which the first capacitor electrode may be formed on the same layer as the semiconductor layer of the transistor, the second capacitor electrode may be formed on the same layer as the gate electrode of the transistor, and the first insulating layer may be the gate insulating layer. The display device may further include a third capacitor electrode overlapping the first capacitor electrode and the second capacitor electrode, in which the first capacitor electrode and the second capacitor electrode may overlap each other with the first insulating layer therebetween, so as to form a first storage capacitor, and the second capacitor electrode and the third capacitor electrode may overlap each other with the second insulating layer therebetween, so as to form a second storage capacitor. Another exemplary embodiment of the present invention provides a method of manufacturing a display device, including: forming signal lines on a substrate, the signal lines including a gate line, a data line, and a driving voltage line collectively defining an outer boundary of a pixel area; forming a transistor on the substrate, the transistor being connected to the signal line; forming a first electrode extending across the pixel area, the first electrode being connected to the transistor, and disposed on the signal line and the transistor, the first electrode further having a first portion and a second portion, the first portion overlying only the signal line and the transistor, and the second portion comprising all of the first electrode not included in the first portion; forming a pixel defining layer on only the first portion of the first electrode; forming an organic emission layer disposed on substantially the entire second portion but not on the first portion; and forming a second electrode on the pixel defining layer and the organic emission layer. The organic emission layer may not be formed on the pixel defining layer. The manufacturing method of a display device may further include forming a first capacitor electrode and a second capacitor electrode on the substrate, the first capacitor electrode and second capacitor electrode overlapping each other with a first insulating layer therebetween, in which the organic emission layer may overlap the first capacitor electrode and the second capacitor electrode, and the pixel defining layer may not overlap either the first capacitor electrode or the second capacitor electrode. The forming of the transistor may include forming a semiconductor layer on the substrate, forming a gate insulating layer on the semiconductor layer, and forming a gate electrode on the gate insulating layer, in which the gate electrode may include a first layer and a second layer positioned on the first layer, the first capacitor electrode may be formed on the same layer as the semiconductor layer of the transistor, and the second capacitor electrode may be formed on the same layer as the first layer of the gate electrode of the transistor. The manufacturing method of a display device may further include forming a first capacitor electrode and a second capacitor electrode on the substrate, the first capacitor electrode and the second capacitor electrode overlapping each other with a first insulating layer therebetween, in which the organic emission layer may not overlap either the first capacitor electrode or the second capacitor electrode, and the pixel defining layer may overlap the first capacitor electrode and the second capacitor electrode. The forming of the transistor may include forming a semiconductor layer on the substrate, forming a gate insulating layer on the semiconductor layer, and forming a gate electrode on the gate insulating layer, in which the first capacitor electrode may be formed on the same layer as the semiconductor layer of the transistor, and the second capacitor electrode may be formed on the same layer as the gate electrode of the transistor. The method of manufacturing a display device may further include forming a third capacitor electrode overlapping the first capacitor electrode and the second capacitor electrode, in which the first capacitor electrode and the second capacitor electrode may overlap each other with the first insulating layer therebetween, so as to form a first storage capacitor, and the second capacitor electrode and the third capacitor electrode may overlap each other with the second insulating layer therebetween, so as to form a second storage capacitor. According to the exemplary embodiment of the present invention, it is possible to prevent reduction in emission efficiency while increasing an emission area of the display device. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an equivalent circuit diagram of one pixel of a display device according to an exemplary embodiment of the present invention. FIG. 2 is a layout view of the display device according to the exemplary embodiment of the present invention. FIG. 3 is a cross-sectional view of the display device of FIG. 2 taken along line III-III. FIG. 4 is a cross-sectional view of the display device of FIG. 2 taken along line IV-IV. FIG. 5 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention, and which is taken along line III-III of a display device for which FIG. 2 is representative. FIG. 6 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention, and which is taken along line IV-IV of a display device for which FIG. 2 is representative. FIG. 7 is a layout view of a display device according to another exemplary embodiment of the present invention. FIG. 8 is a cross-sectional view of the display device of FIG. 7 taken along line VIII-VIII. FIG. 9 is a cross-sectional view of the display device of FIG. 7 taken along line IX-IX. FIG. 10 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention, and which is taken along line VIII-VIII of a display device for which FIG. 7 is representative. FIG. 11 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention, and which is taken along line IX-IX of a display device for which FIG. 7 is representative. FIGS. 12 to 31 are cross-sectional views sequentially illustrating a method for manufacturing a display device according to an exemplary embodiment of the present invention. FIGS. 32 to 39 are cross-sectional views sequentially illustrating a method for manufacturing a display device according to another exemplary embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like reference numerals designate like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. Hereinafter, a display device according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings. First, a connection relationship between signal lines and pixels of a display device according to an exemplary embodiment of the present invention will be described with reference to FIG. 1 . FIG. 1 is an equivalent circuit diagram of one pixel of a display device according to an exemplary embodiment of the present invention. Referring to FIG. 1 , the display device according to the exemplary embodiment of the present invention includes a plurality of signal lines 121 , 171 , and 172 and a pixel PX connected thereto. Here, the pixel PX means a minimum unit for displaying an image, and the display device displays the image according to a plurality of pixels PX. The signal lines 121 , 171 , and 172 include a gate line 121 transferring a gate signal (or a scanning signal), a data line 171 transferring a data signal, and a driving voltage line 172 transferring a driving voltage. The gate lines 121 extend substantially in a row direction and are substantially parallel to each other, and the data lines 171 extend substantially in a column direction and are substantially parallel to each other. The driving voltage lines 172 extend substantially in a column direction, but may alternatively extend in a row direction, or be formed in a net or other shape. One pixel PX includes a switching transistor Qs, a driving transistor Qd, a storage capacitor Cst, and an organic light emitting element LD. The switching transistor Qs has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the gate line 121 , the input terminal is connected to the data line 171 , and the output terminal is connected to the driving transistor Qd. The switching transistor Qs transfers a data signal received from the data line 171 to the driving transistor Qd in response to a scanning signal received from the gate line 121 . The driving transistor Qd also has a control terminal, an input terminal, and an output terminal, where the control terminal is connected to the output terminal of the switching transistor Qs, the input terminal is connected to the driving voltage line 172 , and the output terminal is connected to the organic light emitting element LD. The driving transistor Qd transfers an output current I LD of which a magnitude varies according to a voltage applied between the control terminal and the output terminal. The storage capacitor Cst is connected between the control terminal and the input terminal of the driving transistor Qd. The storage capacitor Cst charges a data signal applied to the control terminal of the driving transistor Qd and maintains the charged data signal even after the switching transistor Qs is turned off. The organic light emitting element LD, for example an organic light emitting diode (OLED), includes an anode connected to the output terminal of the driving transistor Qd and a cathode connected to a common voltage Vss. The organic light emitting element LD emits light by varying an intensity according to the output current I LD of the driving transistor Qd, so as to thereby display an image. The organic light emitting element LD may include an organic material which uniquely expresses any one or one or more of primary colors such as three primary colors of red, green, and blue, and the organic light emitting diode display then displays a desired image according to a spatial sum of the various colors expressed. Further, the organic light emitting element LD may emit a white color constituted by the sum of the primary colors such as the three primary colors, and in this case, a color filter displaying any one of the primary colors such as the above three primary colors is formed in each pixel. Further, each pixel may include a pixel displaying one of the primary colors and a pixel displaying white, and in this case, the color filter may be formed only in the pixel displaying white. The switching transistor Qs and the driving transistor Qd can be n-channel field effect transistors (FET), but at least one thereof may alternatively be a p-channel field effect transistor. Further, a connection relationship of the transistors Qs and Qd, the storage capacitor Cst, and the organic light emitting element LD may be changed. Further details of the display device according to the exemplary embodiment of the present invention will be described with reference to FIGS. 2 to 4 . FIG. 2 is a layout view of the display device according to the exemplary embodiment of the present invention, FIG. 3 is a cross-sectional view of the display device of FIG. 2 taken along line III-III, and FIG. 4 is a cross-sectional view of the display device of FIG. 2 taken along line IV-IV. A buffer layer 120 is formed on a substrate 100 . The substrate 100 may be an insulating substrate made of glass, quartz, ceramic, plastic, or the like, or may be a metallic substrate made of stainless steel or the like. The buffer layer 120 may be formed as a single layer of silicon nitride (SiNx) or as a double-layered structure in which silicon nitride (SiNx) and silicon oxide (SiO 2 ) are laminated. The buffer layer 120 serves to planarize a surface while preventing an undesired component such as an impurity or moisture from penetrating therethrough. A first semiconductor 135 a and a second semiconductor 135 b , which are made of polysilicon, as well as a first capacitor electrode 138 , are formed on the buffer layer 120 . The first semiconductor 135 a includes a first channel region 1355 a , as well as a first source region 1356 a and a first drain region 1357 a which are formed at both sides of the first channel region 1355 a. The second semiconductor 135 b includes a second channel region 1355 b , as well as a second source region 1356 b and a second drain region 1357 b which are formed at both sides of the second channel region 1355 b. The first channel region 1355 a and the second channel region 1355 b of the first semiconductor 135 a and the second semiconductor 135 b are polysilicon in which an impurity is not doped, that is, an intrinsic semiconductor. The first source region 1356 a and the first drain region 1357 a , and the second source region 1356 b and the second drain region 1357 b of the first semiconductor 135 a and the second semiconductor 135 b respectively, are polysilicon in which a conductive impurity is doped, that is, an impurity semiconductor. The first capacitor electrode 138 is extended from the second source region 1356 b of the second semiconductor 135 b . Accordingly, the first capacitor electrode 138 is formed on the same layer as the second source region 1356 b and thus is polysilicon in which a conductive impurity is doped, that is, an impurity semiconductor. The impurity doped in the first source region 1356 a and the first drain region 1357 a , and the second source region 1356 b and the second drain region 1357 b of the first semiconductor 135 a and the second semiconductor 135 b , as well as in the first capacitor electrode 138 , may be any one of a p-type impurity and an n-type impurity. A gate insulating layer 140 is formed on the first semiconductor 135 a and the second semiconductor 135 b , as well as the first capacitor electrode 138 . The gate insulating layer 140 may be a single layer or a multilayer including at least one of tetra ethyl ortho silicate (TEOS), silicon nitride, and silicon oxide. A gate line 121 , a first gate electrode 154 a , a second gate electrode 154 b , and a second capacitor electrode 158 are formed on the gate insulating layer 140 . The gate line 121 is elongated in a horizontal direction to transfer a gate signal, and the first gate electrode 154 a protrudes toward the first semiconductor 135 a from the gate line 121 . The gate line 121 , the first gate electrode 154 a , and the second gate electrode 154 b include lower layers 154 ap and 154 bp made of a transparent conductor, and upper layers 154 aq and 154 bq made of an opaque conductor including a low resistive conductor such as tungsten, molybdenum, aluminum, or an alloy thereof. The second capacitor electrode 158 is connected with the second gate electrode 154 b and overlaps the first capacitor electrode 138 . The second capacitor electrode 158 is formed on the same layer as the lower layers 154 ap and 154 bp of the gate line 121 , the first gate electrode 154 a , and the second gate electrode 154 b . Accordingly, the second capacitor electrode 158 is made of a transparent conductor. The first capacitor electrode 138 and the second capacitor electrode 158 form a first storage capacitor 80 by using the gate insulating layer 140 as a dielectric material. As described above, the first capacitor electrode 138 is formed as a semiconductor layer, and the second capacitor electrode 158 is formed as a transparent conductor. Accordingly, the first storage capacitor 80 has a transparent layer, and as a result, it is possible to prevent reduction in an aperture ratio of the display device due to the formation of the first storage capacitor 80 . A first interlayer insulating layer 160 is formed on the gate line 121 , the first gate electrode 154 a , the second gate electrode 154 b , and the second capacitor electrode 158 . The first interlayer insulating layer 160 may be formed of tetra ethyl ortho silicate (TEOS), silicon nitride, silicon oxide, or the like, just as the gate insulating layer 140 . A first source contact hole 166 a exposing the first source region 1356 a of the first semiconductor 135 a , a first drain contact hole 167 a exposing the first drain region 1357 a of the first semiconductor 135 a , a second source contact hole 166 b exposing the second source region 1356 b of the second semiconductor 135 b , and a second drain contact hole 167 b exposing the second drain region 1357 b of the second semiconductor 135 b are each formed through the first interlayer insulating layer 160 and the gate insulating layer 140 . In the first interlayer insulating layer 160 also has a first contact hole 81 formed therethrough, the first contact hole 81 exposing the second gate electrode 154 b. A data line 171 including the first source electrode 176 a , a driving voltage line 172 including a second source electrode 176 b , and a first drain electrode 177 a and a second drain electrode 177 b are formed on the first interlayer insulating layer 160 . The data line 171 transfers a data signal and extends in a direction to cross the gate line 121 . The driving voltage line 172 transfers a predetermined voltage and extends to be generally parallel to the data line 171 . The first source electrode 176 a protrudes toward the first semiconductor 135 a from the data line 171 , and the second source electrode 176 b protrudes toward the second semiconductor 135 b from the driving voltage line 172 . The first source electrode 176 a is connected with the first source region 1356 a through the first source contact hole 166 a , and the second source electrode 176 b is connected with the second source region 1356 b through the second source contact hole 166 b. The first drain electrode 177 a faces the first source electrode 176 a , and the first drain electrode 177 a is connected with the first drain region 1357 a through the first drain contact hole 167 a . Similarly, the second drain electrode 177 b faces the second source electrode 176 b , and the second drain electrode 177 b is connected with the second drain region 1357 b through the second drain contact hole 167 b. The first drain electrode 177 a is extended along (i.e. generally parallel to) the gate line and is electrically connected with the second gate electrode 154 b through the first contact hole 81 . The second interlayer insulating layer 180 is formed on the data line 171 (including the first source electrode 176 a ), the driving voltage line 172 (including the second source electrode 176 b ), and the first drain electrode 177 a and the second drain electrode 177 b. The second interlayer insulating layer 180 may be formed of the same material as the first interlayer insulating layer 160 , and may have a second contact hole 82 formed therein and exposing the second drain electrode 177 b. A first electrode 191 is formed on the second interlayer insulating layer 180 . The first electrode 191 may be an anode. The first electrode 191 is connected with the second drain electrode 177 b through the second contact hole 82 . The first electrode 191 is formed throughout one pixel area which is surrounded by two adjacent gate lines 121 , the data line 171 , the driving voltage line 172 , and the like. Further, an edge of the first electrode 191 may overlap the two adjacent gate lines 121 , the data line 171 , and the driving voltage line 172 . A pixel defining layer 195 is formed on the first electrode 191 . The pixel defining layer 195 is formed in a region which overlaps the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , and the like, and is formed as an opaque layer. The pixel defining layer 195 is shown as the hatched area of FIG. 2 . A display device according to another exemplary embodiment of the present invention may further include an additional opaque layer in addition to that overlying the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , and the second source electrode 176 b and the second drain electrode 177 b . In this case, the pixel defining layer 195 may overlap the additional opaque layer. The pixel defining layer 195 may include a resin such as polyacrylates or polyimides, a silica-based inorganic material, and the like. An organic emission layer 370 is formed on parts of the first electrode 191 that are not covered by the pixel defining layer 195 . As such, the organic emission layer 370 is formed in the region which does not overlap the pixel defining layer 195 , and the organic emission layer 370 is not positioned on the pixel defining layer 195 . Accordingly, in the pixel area, the organic emission layer 370 does not overlap the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , and the like, each of which are covered by the opaque layer. The organic emission layer 370 includes an emission layer, and may further include one or more of a hole-injection layer (HIL), a hole-transporting layer (HTL), an electron-transporting layer (ETL), and an electron-injection layer (EIL). In the case where the organic emission layer 370 includes each of the hole-injection layer (HIL), the hole-transporting layer (HTL), the electron-transporting layer (ETL), and the electron-injection layer (EIL), the hole-injection layer (HIL) is positioned on the first electrode 191 which is an anode, and the hole-transporting layer, the emission layer, the electron-transporting layer, and the electron-injection layer may be sequentially laminated thereon. The organic emission layer 370 may, for example, emit light of any one of the three primary colors of red, green and blue. A second electrode 270 is formed on the pixel defining layer 195 and the organic emission layer 370 . The second electrode 270 is a cathode of the organic light emitting element. Accordingly, the first electrode 191 , the organic emission layer 370 , and the second electrode 270 together form the organic light emitting element LD. The second electrode 270 is formed as a reflective layer, a transparent layer, or a transflective layer. The reflective layer and the transflective layer are made of one or more metals from among magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr), and aluminum (Al), as well as any alloy thereof. The reflective layer and the transflective layer are determined according to the thickness of their material, and the transflective layer may be formed by a metal layer having a thickness of 200 nm or less. The transparent layer is made of a material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). As described above, the display device according to the exemplary embodiment of the present invention includes the first electrode 191 formed throughout the pixel area, the pixel defining layer 195 formed in the region overlapping the opaque signal wires of the pixel area, the organic emission layer 370 formed in areas which do not overlap with the pixel defining layer 195 , and the second electrode 270 formed on the organic emission layer 370 . Accordingly, as illustrated in FIGS. 3 and 4 , the organic emission layer 370 emits light in a first region R1, a second region R2, a third region R3, and a fourth region R4 which do not overlap the opaque wire layer, so as to display an image. In this embodiment, the organic emission layer 370 is formed even in areas that traditionally do not have an emission layer present, such as a region between the gate line 121 and the first source electrode 176 a and the first drain electrode 177 a , and a region between the driving voltage line 172 and the first drain electrode 177 a , in an existing display device. Accordingly, an emission area of the display device is increased relative to conventional display devices. The pixel defining layer 195 is only formed over the opaque signal wires, and as a result, an aperture ratio of the display device is increased. Even so, the organic emission layer 370 of the display device is formed in regions surrounded by the pixel defining layer 195 and is not formed over the pixel defining layer 195 , and thus is not present, or is largely not present, over the opaque signal wires. As a result, by preventing the organic emission layer 370 from unnecessarily emitting light even in the region where the image is not displayed, it is possible to prevent deterioration of emission efficiency while increasing an emission area of the display device. Next, a display device according to another exemplary embodiment of the present invention will be described with reference to FIGS. 5 and 6 , in addition to FIG. 2 . FIG. 5 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention, which is an alternate cross-sectional view of the display device of FIG. 2 taken along line III-III, and FIG. 6 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention, which is another alternate cross-sectional view of the display device of FIG. 2 taken along line IV-IV. Referring to FIGS. 5 and 6 together with FIG. 2 , the display device according to this exemplary embodiment is similar to the display device according to the exemplary embodiment described with reference to FIGS. 2 to 4 . The detailed description for like constituent elements is omitted. A buffer layer 120 is formed on a substrate 100 , and a first semiconductor 135 a and a second semiconductor 135 b made of polysilicon, as well as a first capacitor electrode 138 are formed on the buffer layer 120 . The first semiconductor 135 a includes a first source region 1356 a and a first drain region 1357 a which are formed at both sides of a first channel region 1355 a. The second semiconductor 135 b includes a second channel region 1355 b , as well as a second source region 1356 b and a second drain region 1357 b which are formed at both sides of the second channel region 1355 b. The first capacitor electrode 138 is extended from the second source region 1356 b of the second semiconductor 135 b. A gate insulating layer 140 is formed on the first semiconductor 135 a and the second semiconductor 135 b , as well as the first capacitor electrode 138 . A gate line 121 , a first gate electrode 154 a , a second gate electrode 154 b , and a second capacitor electrode 158 are formed on the gate insulating layer 140 . The gate line 121 is elongated in a horizontal direction to transfer a gate signal, and the first gate electrode 154 a protrudes toward the first semiconductor 135 a from the gate line 121 . The gate line 121 , the first gate electrode 154 a , and the second gate electrode 154 b may be made of an opaque conductor including tungsten, molybdenum, aluminum or an alloy thereof. The second capacitor electrode 158 is connected with the second gate electrode 154 b and overlaps the first capacitor electrode 138 . The second capacitor electrode 158 is formed on the same layer as that of the gate line 121 , the first gate electrode 154 a , and the second gate electrode 154 b. A first interlayer insulating layer 160 is formed on the gate line 121 , the first gate electrode 154 a , the second gate electrode 154 b , and the second capacitor electrode 158 . A first source contact hole 166 a exposing the first source region 1356 a of the first semiconductor 135 a , a first drain contact hole 167 a exposing the first drain region 1357 a of the first semiconductor 135 a , a second source contact hole 166 b exposing the second source region 1356 b of the second semiconductor 135 b , and a second drain contact hole 167 b exposing the second drain region 1357 b of the second semiconductor 135 b are formed in the first interlayer insulating layer 160 and the gate insulating layer 140 . A first contact hole 81 exposing the second gate electrode 154 b is formed in the first interlayer insulating layer 160 . A data line 171 including the first source electrode 176 a , a driving voltage line 172 including a second source electrode 176 b , as well as a first drain electrode 177 a and a second drain electrode 177 b are formed on the first interlayer insulating layer 160 . The first source electrode 176 a is connected with the first source region 1356 a through the first source contact hole 166 a , and the second source electrode 176 b is connected with the second source region 1356 b through the second source contact hole 166 b. The first drain electrode 177 a faces the first source electrode 176 a , and the first drain electrode 177 a is connected with the first drain region 1357 a through the first drain contact hole 167 a . Similarly, the second drain electrode 177 b faces the second source electrode 176 b , and the second drain electrode 177 b is connected with the second drain region 1357 b through the second drain contact hole 167 b. The first drain electrode 177 a extends generally parallel to the gate line and is electrically connected with the second gate electrode 154 b through the first contact hole 81 . The first capacitor electrode 138 and the second capacitor electrode 158 form a first storage capacitor 80 by using the gate insulating layer 140 as a dielectric material. On the data line 171 including the first source electrode 176 a are formed the driving voltage line 172 including the second source electrode 176 b , the first drain electrode 177 a and the second drain electrode 177 b , as well as third interlayer insulating layer 180 . The third interlayer insulating layer 180 a may be made of the same material as the first interlayer insulating layer 160 . A color filter 230 is formed on the third interlayer insulating layer 180 a . The color filter 230 may display one of the primary colors such as red, green and blue. The color filter 230 may not be formed in a region overlapping transistors Qs and Qd, and may be formed throughout one pixel area. The color filters 230 may not be formed in at least some of the pixel areas among a plurality of pixel areas, and the pixel areas where the color filters 230 are not formed may display white. A fourth interlayer insulating layer 180 b is formed on the third interlayer insulating layer 180 a and color filter 230 . The third interlayer insulating layer 180 a and the fourth interlayer insulating layer 180 b have a second contact hole 82 exposing a second drain electrode 177 b. A first electrode 191 is formed on the fourth interlayer insulating layer 180 b . The first electrode 191 may be an anode. The first electrode 191 is connected with the second drain electrode 177 b through the second contact hole 82 . The first electrode 191 is formed throughout one pixel area which is surrounded by two adjacent gate lines 121 , the data line 171 , the driving voltage line 172 , and the like. Further, an edge of the first electrode 191 may overlap the two adjacent gate lines 121 , the data line 171 , and the driving voltage line 172 . A pixel defining layer 195 is formed on the first electrode 191 . The pixel defining layer 195 is formed to overlap the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , the capacitor electrodes 138 , 158 , and 178 , and the like, which are formed as one or more opaque layers. A display device according to another exemplary embodiment of the present invention may further include an additional opaque layer in addition to the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , and the second source electrode 176 b and the second drain electrode 177 b , and in this case, the pixel defining layer 195 may be formed in a region overlapping the additional opaque layer. An organic emission layer 370 is formed on that portion of the first electrode 191 which is not covered by the pixel defining layer 195 . The organic emission layer 370 does not overlap the pixel defining layer 195 . Accordingly, the organic emission layer 370 also does not overlap any of the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , the capacitor electrodes 138 , 158 , and 178 , and the like, which are formed as opaque layer(s) in the pixel area. The organic emission layer 370 may display white. Further, in the organic emission layer 370 , emission materials emitting red light, green light, and blue light may be deposited so that the emission materials display a composite light of a white color. A second electrode 270 is formed on the pixel defining layer 195 and the organic emission layer 370 . The second electrode 270 is a cathode of the organic light emitting element. Accordingly, the first electrode 191 , organic emission layer 370 , and the second electrode 270 form the organic light emitting element LD. As described above, the display device according to the exemplary embodiment of the present invention includes the first electrode 191 formed throughout the pixel area, the pixel defining layer 195 formed to overlap the opaque signal lines of the pixel area, the organic emission layer 370 formed so as not to overlap the pixel defining layer 195 , and the second electrode 270 formed on the organic emission layer 370 . Accordingly, as illustrated in FIGS. 5 and 6 , the organic emission layer 370 emits light in a first region R1, a second region R2, a third region R3, and a fourth region R4 which do not overlap the opaque wire layer, to display an image. As such, the organic emission layer 370 is formed even in areas that traditionally do not have an emission layer present, such as a region between the gate line 121 and the first source electrode 176 a and the first drain electrode 177 a , and/or a region between the driving voltage line 172 and the first drain electrode 177 a . Accordingly, an emission area of the display device is increased. The pixel defining layer 195 is only formed over the opaque signal wires, and as a result, an aperture ratio of the display device is increased. Even so, the organic emission layer 370 of the display device is formed in regions surrounded by the pixel defining layer 195 and is not formed over the pixel defining layer 195 , and thus is not present, or is largely not present, over the opaque signal wires. As a result, by preventing the organic emission layer 370 from unnecessarily emitting light even in the region where the image is not displayed, it is possible to prevent reduction in emission efficiency while also increasing an emission area of the display device. All of many features of the display device according to the exemplary embodiment described with reference to FIGS. 2 to 4 may be applied to the display device according to the exemplary embodiment. Next, a display device according to another exemplary embodiment of the present invention will be described with reference to FIGS. 7 to 9 . FIG. 7 is a layout view of a display device according to another exemplary embodiment of the present invention, FIG. 8 is a cross-sectional view of the display device of FIG. 7 taken along line VIII-VIII, and FIG. 9 is a cross-sectional view of the display device of FIG. 7 taken along line IX-IX. Referring to FIGS. 7 to 9 , the display device of this exemplary embodiment is similar to the display device according to the exemplary embodiment described with reference to FIGS. 2 to 4 . Accordingly, detailed description for like constituent elements is omitted. A buffer layer 120 is formed on a substrate 100 , and a first semiconductor 135 a and a second semiconductor 135 b made of polysilicon, as well as a first capacitor electrode 138 , are formed on the buffer layer 120 . The first semiconductor 135 a includes a first channel region 1355 a , and a first source region 1356 a and a first drain region 1357 a which are formed at both sides of the first channel region 1355 a. The second semiconductor 135 b includes a second channel region 1355 b , and a second source region 1356 b and a second drain region 1357 b which are formed at both sides of the second channel region 1355 b. The first capacitor electrode 138 is extended from the second source region 1356 b of the second semiconductor 135 b. A gate insulating layer 140 is formed on the first semiconductor 135 a and the second semiconductor 135 b , as well as the first capacitor electrode 138 . A gate line 121 , a first gate electrode 154 a , a second gate electrode 154 b , and a second capacitor electrode 158 are formed on the gate insulating layer 140 . The gate line 121 is elongated in a horizontal direction to transfer a gate signal, and the first gate electrode 154 a protrudes toward the first semiconductor 135 a from the gate line 121 . The gate line 121 , the first gate electrode 154 a , and the second gate electrode 154 b may be made of an opaque conductor including tungsten, molybdenum, aluminum or an alloy thereof. The second capacitor electrode 158 is connected with the second gate electrode 154 b and overlaps the first capacitor electrode 138 . The second capacitor electrode 158 is formed on the same layer as the gate line 121 , the first gate electrode 154 a , and the second gate electrode 154 b. A first interlayer insulating layer 160 is formed on the first gate electrode 154 a , the second gate electrode 154 b , and the second capacitor electrode 158 . A first source contact hole 166 a exposing the first source region 1356 a of the first semiconductor 135 a , a first drain contact hole 167 a exposing the first drain region 1357 a of the first semiconductor 135 a , a second source contact hole 166 b exposing the second source region 1356 b of the second semiconductor 135 b , and a second drain contact hole 1676 exposing the second drain region 1357 b of the second semiconductor 135 b are formed in the first interlayer insulating layer 160 and the gate insulating layer 140 . A first contact hole 81 exposing the second gate electrode 154 b is formed in the first interlayer insulating layer 160 . A data line 171 including the first source electrode 176 a , a driving voltage line 172 including a second source electrode 176 b , a first drain electrode 177 a and a second drain electrode 1776 , and a third capacitor electrode 178 are formed on the first interlayer insulating layer 160 . The first source electrode 176 a is connected with the first source region 1356 a through the first source contact hole 166 a , and the second source electrode 176 b is connected with the second source region 1356 b through the second source contact hole 166 b. The first drain electrode 177 a faces the first source electrode 176 a , and the first drain electrode 177 a is connected with the first drain region 1357 a through the first drain contact hole 167 a . Similarly, the second drain electrode 1776 faces the second source electrode 176 b , and the second drain electrode 1776 is connected with the second drain region 1357 b through the second drain contact hole 1676 . The first drain electrode 177 a is extended along, or generally parallel to, the gate line and electrically connected with the second gate electrode 154 b through the first contact hole 81 . The third capacitor electrode 178 protrudes from the driving voltage line 172 and overlaps the second capacitor electrode 158 . The first capacitor electrode 138 and the second capacitor electrode 158 form a first storage capacitor 80 by using the gate insulating layer 140 as a dielectric material, and the second capacitor electrode 158 and the third capacitor electrode 178 form a second storage capacitor 8 by using the first interlayer insulating layer 160 as a dielectric material. Referring to FIG. 5 together with FIG. 2 , cross-sectional areas of the first capacitor electrode 138 and the second capacitor electrode 158 of the display device according to the present exemplary embodiment are smaller than those of the first capacitor electrode 138 and the second capacitor electrode 158 of the display device according to the exemplary embodiment illustrated in FIG. 2 . However, in the case of the display device according to the present exemplary embodiment, the second storage capacitor 8 is further included in addition to the first storage capacitor 80 , and as a result, while the storage capacitance of the storage capacitor Cst is not reduced, an area of the storage capacitor Cst may be reduced. Accordingly, it is possible to prevent reduction in aperture ratio of the display device due to the formation of the storage capacitor Cst. The second interlayer insulating layer 180 is formed on the data line 171 including the first source electrode 176 a , the driving voltage line 172 including the second source electrode 176 b , and the first drain electrode 177 a and the second drain electrode 177 b. The second interlayer insulating layer 180 may be formed of the same material as the first interlayer insulating layer 160 , and has a second contact hole 82 exposing the second drain electrode 177 b. A first electrode 191 is formed on the second interlayer insulating layer 180 . The first electrode 191 may be an anode. The first electrode 191 is connected with the second drain electrode 177 b through the second contact hole 82 . The first electrode 191 is formed throughout one pixel area which is surrounded by two adjacent gate lines 121 , the data line 171 , the driving voltage line 172 , and the like. Further, an edge of the first electrode 191 may overlap the two adjacent gate lines 121 , the data line 171 , and the driving voltage line 172 . A pixel defining layer 195 is formed on the first electrode 191 . The pixel defining layer 195 is formed to overlap the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , the capacitor electrodes 138 , 158 , and 178 , and the like, which are formed as opaque layers. A display device according to another exemplary embodiment of the present invention may further include an additional opaque layer in addition to the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , and the second source electrode 176 b and the second drain electrode 177 b . In this case, the pixel defining layer 195 may overlap the additional opaque layer. An organic emission layer 370 is formed only on that portion of the first electrode 191 which is not covered by the pixel defining layer 195 . As such, the organic emission layer 370 is not positioned on the pixel defining layer 195 . Accordingly, the organic emission layer 370 does not overlap any of the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , the capacitor electrodes 138 , 158 , and 178 , and the like, which are formed as opaque layers in the pixel area. The organic emission layer 370 may emit any one of light of three primary colors such as red, green and blue. A second electrode 270 is formed on the pixel defining layer 195 and the organic emission layer 370 . The second electrode 270 is a cathode of the organic light emitting element. Accordingly, the first electrode 191 , the organic emission layer 370 , and the second electrode 270 form an organic light emitting element LD. As described above, the display device according to the exemplary embodiment of the present invention includes the first electrode 191 formed throughout the pixel area, the pixel defining layer 195 overlapping the opaque signal lines of the pixel area, the organic emission layer 370 which does not overlap the pixel defining layer 195 , and the second electrode 270 formed on the organic emission layer 370 . Accordingly, as illustrated in FIGS. 6 and 7 , the organic emission layer 370 emits light in a first region R1, a second region R2, a third region R3, a fourth region R4, and a fifth region R5 which do not overlap any of the opaque wire layers, so as to display an image. As such, the organic emission layer 370 is formed even in regions which are not display regions in conventional display devices, such as the region between the gate line 121 and the first source electrode 176 a and the first drain electrode 177 a , and a region between the driving voltage line 172 and the first drain electrode 177 a . As a result, an emission area of the display device is increased. The pixel defining layer 195 only covers the opaque signal wires of the pixel area, and as a result, an aperture ratio of the display device is increased. Accordingly, the organic emission layer 370 is formed is formed in regions surrounded by the pixel defining layer 195 and so as not to overlap the pixel defining layer 195 , and thus the organic emission layer 370 is formed in what has conventionally been a non-opening region. As a result, by preventing the organic emission layer 370 from unnecessarily emitting light even in the region where the image is not displayed, it is possible to prevent deterioration of emission efficiency while increasing an emission area of the display device. Hereinabove, all of many features of the display devices according to the exemplary embodiment described with reference to FIGS. 2 to 4 , and the exemplary embodiment described with reference to FIGS. 2 , 5 , and 6 may be applied to the display device according to the exemplary embodiment. Next, a display device according to another exemplary embodiment of the present invention will be described with reference to FIGS. 10 and 11 together with FIG. 7 . FIG. 10 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention, which is an alternate cross-sectional view of the display device of FIG. 2 taken along line IV-IV. FIG. 11 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention, which is an alternate cross-sectional view of the display device of FIG. 7 taken along line IX-IX. Referring to FIGS. 7 , 10 , and 11 , the display device according to the exemplary embodiment is similar to the display device according to the exemplary embodiment with reference to FIGS. 2 to 4 , and the display device according to the exemplary embodiment described with reference to FIGS. 7 to 9 . The detailed description for like constituent elements is omitted. A buffer layer 120 is formed on a substrate 100 , and a first semiconductor 135 a and a second semiconductor 135 b made of polysilicon, as well as a first capacitor electrode 138 , are formed on the buffer layer 120 . The first semiconductor 135 a includes a first channel region 1355 a , and a first source region 1356 a and a first drain region 1357 a which are formed at both sides of the first channel region 1355 a. The second semiconductor 135 b includes a second channel region 1355 b , and a second source region 1356 b and a second drain region 1357 b which are formed at both sides of the second channel region 1355 b. The first capacitor electrode 138 is extended from the second source region 1356 b of the second semiconductor 135 b. A gate insulating layer 140 is formed on the first semiconductor 135 a and the second semiconductor 135 b , as well as the first capacitor electrode 138 . A gate line 121 , a first gate electrode 154 a , a second gate electrode 154 b , and a second capacitor electrode 158 are formed on the gate insulating layer 140 . The gate line 121 is elongated in a horizontal direction to transfer a gate signal, and the first gate electrode 154 a protrudes toward the first semiconductor 135 a from the gate line 121 . The gate line 121 , the first gate electrode 154 a , and the second gate electrode 154 b may be made of an opaque conductor including tungsten, molybdenum, aluminum or an alloy thereof. The second capacitor electrode 158 is connected with the second gate electrode 154 b to overlap the first capacitor electrode 138 . The second capacitor electrode 158 is formed on the same layer as the gate line 121 , the first gate electrode 154 a , and the second gate electrode 154 b. A first interlayer insulating layer 160 is formed on the gate line 121 , the first gate electrode 154 a , the second gate electrode 154 b , and the second capacitor electrode 158 . A first source contact hole 166 a exposing the first source region 1356 a of the first semiconductor 135 a , a first drain contact hole 167 a exposing the first drain region 1357 a of the first semiconductor 135 a , a second source contact hole 166 b exposing the second source region 1356 b of the second semiconductor 135 b , and a second drain contact hole 167 b exposing the second drain region 1357 b of the second semiconductor 135 b are formed in the first interlayer insulating layer 160 and the gate insulating layer 140 . A first contact hole 81 exposing the second gate electrode 154 b is formed in the first interlayer insulating layer 160 . A data line 171 including the first source electrode 176 a , a driving voltage line 172 including a second source electrode 176 b , a first drain electrode 177 a and a second drain electrode 177 b , and a third capacitor electrode 178 are formed on the first interlayer insulating layer 160 . The first source electrode 176 a is connected with the first source region 1356 a through the first source contact hole 166 a , and the second source electrode 176 b is connected with the second source region 1356 b through the second source contact hole 166 b. The first drain electrode 177 a faces the first source electrode 176 a , and the first drain electrode 177 a is connected with the first drain region 1357 a through the first drain contact hole 167 a . Similarly, the second drain electrode 177 b faces the second source electrode 176 b , and the second drain electrode 177 b is connected with the second drain region 1357 b through the second drain contact hole 167 b. The first drain electrode 177 a is extended generally parallel to the gate line and is electrically connected with the second gate electrode 154 b through the first contact hole 81 . The third capacitor electrode 178 protrudes from the driving voltage line 172 and overlaps the second capacitor electrode 158 . The first capacitor electrode 138 and the second capacitor electrode 158 form a first storage capacitor 80 by using the gate insulating layer 140 as a dielectric material, and the second capacitor electrode 158 and the third capacitor electrode 178 form a second storage capacitor 8 by using the first interlayer insulating layer 160 as a dielectric material. Referring to FIG. 7 together with FIG. 2 , cross-sectional areas of the first capacitor electrode 138 and the second capacitor electrode 158 of the display device according to the exemplary embodiment are smaller than those of the first capacitor electrode 138 and the second capacitor electrode 158 of the display device according to the exemplary embodiment illustrated in FIG. 2 . However, in the case of the display device according to the exemplary embodiment, the second storage capacitor 8 is further included in addition to the first storage capacitor 80 , and as a result, while storage capacitance of the storage capacitor Cst is not reduced, an area of the storage capacitor Cst may be reduced. Accordingly, it is possible to prevent reduction in an aperture ratio of the display device due to the formation of the storage capacitor Cst. The third interlayer insulating layer 180 a is formed on the data line 171 including the first source electrode 176 a , the driving voltage line 172 including the second source electrode 176 b , and the first drain electrode 177 a and the second drain electrode 177 b. The third interlayer insulating layer 180 a may be made of the same material as the first interlayer insulating layer 160 . A color filter 230 is formed on the third interlayer insulating layer 180 a . The color filter 230 may display one of the primary colors such as three primary colors of red, green and blue. The color filter 230 may not be formed in a region overlapping the transistors Qs and Qd, and may be formed throughout one pixel area. The color filters 230 may not be formed in at least some of the pixel areas among a plurality of pixel areas, and the pixel areas where the color filters 230 are not formed may display white. On the third interlayer insulating layer 180 a and color filter 230 , a fourth interlayer insulating layer 180 b is formed. The third interlayer insulating layer 180 a and the fourth interlayer insulating layer 180 b have a second contact hole 82 exposing a second drain electrode 177 b. A first electrode 191 is formed on the fourth interlayer insulating layer 180 b . The first electrode 191 may be an anode. The first electrode 191 is connected with the second drain electrode 177 b through the second contact hole 82 . The first electrode 191 is formed throughout one pixel area which is surrounded by two adjacent gate lines 121 , the data line 171 , the driving voltage line 172 , and the like. Further, an edge of the first electrode 191 may overlap the two adjacent gate lines 121 , the data line 171 , and the driving voltage line 172 . A pixel defining layer 195 is formed on the first electrode 191 . The pixel defining layer 195 overlaps the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , the capacitor electrodes 138 , 158 , and 178 , and the like, which are formed as opaque layers. A display device according to another exemplary embodiment of the present invention may further include an additional opaque layer in addition to the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , and the second source electrode 176 b and the second drain electrode 177 b , and in this case, the pixel defining layer 195 may overlap this additional opaque layer as well. An organic emission layer 370 is formed on the first electrode 191 but not overlapping the pixel defining layer 195 . Accordingly, the organic emission layer 370 is formed so as not to overlap the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , the capacitor electrodes 138 , 158 , and 178 , and the like, which are formed as opaque layers in the pixel area. The organic emission layer 370 may display white. Further, in the organic emission layer 370 , emission materials emitting red light, green light, and blue light may be laminated and thus may display a composite white light. A second electrode 270 is formed on the pixel defining layer 195 and the organic emission layer 370 . The second electrode 270 is a cathode of the organic light emitting element. Accordingly, the first electrode 191 , organic emission layer 370 , and the second electrode 270 form an organic light emitting element LD. As described above, the display device according to the exemplary embodiment of the present invention includes the first electrode 191 formed throughout the pixel area, the pixel defining layer 195 formed to overlap the opaque signal lines of the pixel area, the organic emission layer 370 formed so as not to overlap the pixel defining layer 195 , and the second electrode 270 formed on the organic emission layer 370 . Accordingly, as illustrated in FIGS. 10 and 11 , the organic emission layer 370 emits light in a first region R1, a second region R2, a fourth region R4, and a fifth region R5 which do not overlap the opaque wire layer, so as to display an image. As such, the organic emission layer 370 is formed even in a region which is not conventionally used to display an image, and as a result, an emission area of the display device is increased. The pixel defining layer 195 is only formed over the opaque signal wires, and as a result, an aperture ratio of the display device is increased. Even so, the organic emission layer 370 of the display device is formed in regions surrounded by the pixel defining layer 195 and not formed over the pixel defining layer 195 , and thus is not present, or is largely not present, over the opaque signal wires As a result, by preventing the organic emission layer 370 from unnecessarily emitting light even in the region where the image is not displayed, it is possible to prevent reduction in emission efficiency while increasing an emission area of the display device. Hereinabove, any combination of features of the display devices according to the exemplary embodiment described with reference to FIGS. 2 to 4 , the exemplary embodiment described with reference to FIGS. 2 , 5 , and 6 , the exemplary embodiment described with reference to FIGS. 7 to 9 , and the exemplary embodiment described with reference to FIGS. 7 , 10 , and 11 may be applied to the display device according to the exemplary embodiment. Next, a manufacturing method of a display device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 12 to 31 in addition to FIGS. 2 to 4 . FIGS. 12 to 31 are process cross-sectional views illustrating a manufacturing method of a display device according to an exemplary embodiment of the present invention. Referring to FIGS. 12 and 13 , a buffer layer 120 is formed on a substrate 100 , and a first semiconductor 135 a and a second semiconductor 135 b , as well as a first capacitor electrode 138 , are formed on the buffer layer 120 . In addition, a gate insulating layer 140 is formed on the first semiconductor 135 a , the second semiconductor 135 b , and the first capacitor electrode 138 . Referring to FIGS. 14 and 15 , a first layer 50 a made of a transparent conductor is deposited on the gate insulating layer 140 , and a second layer 50 b made of a low resistive conductor is deposited on the first layer 50 a . A photosensitive film is deposited on the second layer 50 b , and then exposed and printed to form a first photosensitive film pattern 400 a and a second photosensitive film pattern 400 b having different thicknesses, as illustrated in FIGS. 16 and 17 . A thickness of the first photosensitive film pattern 400 a is larger than that of the second photosensitive film pattern 400 b . The first photosensitive film pattern 400 a is formed at a position where the first gate electrode 154 a and the second gate electrode 154 b are to be formed, and the second photosensitive film pattern 400 b is formed at a position where the second capacitor electrode 158 is to be formed. Referring to FIGS. 18 and 19 , the second layer 50 b and the first layer 50 a are sequentially etched by using the first photosensitive film pattern 400 a and the second photosensitive film pattern 400 b as an etching mask, and then a first gate electrode 154 a and a second gate electrode 154 b including lower layers 154 ap and 154 bp and upper layers 154 aq and 154 bq are formed, and a first conductor pattern 58 p and a second conductor pattern 58 q are formed. Next, the second photosensitive film pattern 400 b is removed by ashing or the like, and a height of the first photosensitive film pattern 400 a is decreased, forming a third photosensitive film pattern 400 c as illustrated in FIGS. 20 and 21 . Next, the second conductor pattern 58 q and the third photosensitive film pattern 400 c are removed, and as a result, as illustrated in FIGS. 22 and 23 , the first gate electrode 154 a and the second gate electrode 154 b including the lower layers 154 ap and 154 bp and the upper layers 154 aq and 154 bq , and the second capacitor electrode 158 made of a transparent conductor, are formed. Then a conductive impurity is doped into portions of the first semiconductor 135 a and the second semiconductor 135 b not overlapping the first gate electrode 154 a and the second gate electrode 154 b by using the first gate electrode 154 a and the second gate electrode 154 b as a mask to form the first source region 1356 a and the first drain region 1357 a , and the second source region 1356 b and the second drain region 1357 b of the first semiconductor 135 a and the second semiconductor 135 b. As such, according to the manufacturing method of the display device according to the exemplary embodiment, the first gate electrode 154 a and the second gate electrode 154 b including the lower layers 154 ap and 154 bp and the upper layers 154 aq and 154 bq , and the second capacitor electrode 158 made of a transparent conductor, are formed by one exposure process. As a result, it is possible to prevent an increase in manufacturing cost in forming the second capacitor electrode 158 . As illustrated in FIGS. 24 and 25 , a first interlayer insulating layer 160 is formed on the gate line 121 , the first gate electrode 154 a , the second gate electrode 154 b , and the second capacitor electrode 158 . In this case, a first source contact hole 166 a exposing the first source region 1356 a of the first semiconductor 135 a , a first drain contact hole 167 a exposing the first drain region 1357 a of the first semiconductor 135 a , a second source contact hole 166 b exposing the second source region 1356 b of the second semiconductor 135 b , and a second drain contact hole 167 b exposing the second drain region 1357 b of the second semiconductor 135 b are formed in the first interlayer insulating layer 160 and the gate insulating layer 140 , and a first contact hole 81 exposing the second gate electrode 154 b is formed in the first interlayer insulating layer 160 . A data line 171 including the first source electrode 176 a , a driving voltage line 172 including a second source electrode 176 b , and a first drain electrode 177 a and a second drain electrode 177 b are formed on the first interlayer insulating layer 160 . The second interlayer insulating layer 180 is formed on the data line 171 including the first source electrode 176 a , the driving voltage line 172 including the second source electrode 176 b , and the first drain electrode 177 a and the second drain electrode 177 b . In this case, a second contact hole 82 exposing the second drain electrode 177 b is formed in the second interlayer insulating layer 180 . Although not illustrated, according to a manufacturing method of a display device according to another exemplary embodiment of the present invention, a third interlayer insulating layer 180 a is formed on the data line 171 including the first source electrode 176 a , the driving voltage line 172 including the second source electrode 176 b , and the first drain electrode 177 a and the second drain electrode 177 b ; a color filer 230 is formed on the third interlayer insulating layer 180 a ; and a fourth interlayer insulating layer 180 b may be formed on the third interlayer insulating layer 180 a and the color filter 230 . In this case, a second contact hole 82 exposing a second drain electrode 177 b is formed in the third interlayer insulating layer 180 a and the fourth interlayer insulating layer 180 b. As illustrated in FIGS. 26 and 27 , a first electrode 191 is formed on the second interlayer insulating layer 180 . The first electrode 191 is formed throughout one pixel area which is surrounded by two adjacent gate lines 121 , the data line 171 , the driving voltage line 172 , and the like. Further, an edge of the first electrode 191 may overlap the two adjacent gate lines 121 , the data line 171 , and the driving voltage line 172 . Referring to FIGS. 28 and 29 , a pixel defining layer 195 is formed on the first electrode. The pixel defining layer 195 is formed to overlap the gate line 121 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , and the like, which are formed as opaque layers. According to a manufacturing method of a display device according to another exemplary embodiment of the present invention, an additional opaque layer may be further formed in addition to the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , and the second source electrode 176 b and the second drain electrode 177 b , and in this case, the pixel defining layer 195 may be formed to overlap this additional opaque layer. In more detail, with the organic emission layer 370 does not overlap the pixel defining layer 195 . Thus, the organic emission layer 370 covers the entire pixel area except for the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , and the like, i.e. except for the opaque layers. Next, as illustrated in FIGS. 3 and 4 , a second electrode 270 is formed on the pixel defining layer 195 and the organic emission layer 370 . As such, according to the manufacturing method of the display device according to the exemplary embodiment of the present invention, the first electrode 191 is formed throughout the pixel area, the pixel defining layer 195 overlaps the opaque signal wire of the pixel area, the organic emission layer 370 is formed so as not to overlap the pixel defining layer 195 , and the second electrode 270 is formed on the organic emission layer 370 . Accordingly, as illustrated in FIGS. 3 and 4 , the organic emission layer 370 emits light in a first region R1, a second region R2, a third region R3, and a fourth region R4 which do not overlap the opaque wire layer, so as to display an image. As such, the organic emission layer 370 covers areas typically not covered in conventional display devices, such as the area between the gate line 121 and the first source electrode 176 a and the first drain electrode 177 a , and a region between the driving voltage line 172 and the first drain electrode 177 a , and as a result, an emission area of the display device is increased. The pixel defining layer 195 is formed only in areas that overlap the opaque signal wires of the pixel area, not an opening region in the pixel area, and as a result, an aperture ratio of the display device is increased. And the organic emission layer 370 of the display device is formed in regions surrounded by the pixel defining layer 195 and is not formed over the pixel defining layer 195 . Further, even though the organic emission layer 370 of the display device emits the light, parts of the organic emission layer 370 are formed in the non-opening region. As a result, by preventing the organic emission layer 370 from unnecessarily emitting light even in the region where the image is not displayed, it is possible to prevent deterioration of emission efficiency while increasing an emission area of the display device. Next, a manufacturing method of a display device according to another exemplary embodiment of the present invention will be described with reference to FIGS. 32 to 39 in addition to FIGS. 7 and 9 . FIGS. 32 to 39 are cross-sectional views sequentially illustrating a manufacturing method of a display device according to another exemplary embodiment of the present invention. Referring to FIGS. 32 and 33 , a buffer layer 120 is formed on a substrate 100 , and a first semiconductor 135 a , a second semiconductor 135 b , and a first capacitor electrode 138 are formed on the buffer layer 120 . In addition, a gate insulating layer 140 is formed on the first semiconductor 135 a , the second semiconductor 135 b , and the first capacitor electrode 138 . The first gate electrode 154 a , the second gate electrode 154 b , and the second capacitor electrode 158 each made of a transparent conductor are formed on the gate insulating layer 140 . The first interlayer insulating layer 160 is formed on the gate line 121 , the first gate electrode 154 a , the second gate electrode 154 b and the second capacitor electrode 158 , and a data line 171 including a first source electrode 176 a , a driving voltage line 172 including a second source electrode 176 b , a first drain electrode 177 a and a second drain electrode 177 b , and a third capacitor electrode 178 are formed on the first interlayer insulating layer 160 . The third capacitor electrode 178 protrudes from the driving voltage line 172 and overlaps the second capacitor electrode 158 . The second interlayer insulating layer 180 is formed on the data line 171 including the first source electrode 176 a , the driving voltage line 172 including the second source electrode 176 b , and the first drain electrode 177 a and the second drain electrode 177 b. Although not illustrated, according to a manufacturing method of a display device according to another exemplary embodiment of the present invention, a third interlayer insulating layer 180 a may be formed on the data line 171 including the first source electrode 176 a , the driving voltage line 172 including the second source electrode 176 b , and the first drain electrode 177 a and the second drain electrode 177 b , a color filer 230 is formed on the third interlayer insulating layer 180 a , and a fourth interlayer insulating layer 180 b may be formed on the third interlayer insulating layer 180 a and the color filter 230 . As illustrated in FIGS. 34 and 35 , a first electrode 191 is formed on the second interlayer insulating layer 180 . The first electrode 191 is formed throughout one pixel area which is surrounded by two adjacent gate lines 121 , the data line 171 , the driving voltage line 172 , and the like. Further, an edge of the first electrode 191 may overlap the two adjacent gate lines 121 , the data line 171 , and the driving voltage line 172 . Referring to FIGS. 36 and 37 , a pixel defining layer 195 is formed on the first electrode. The pixel defining layer 195 is formed to overlap the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , and the like, which are formed as opaque layers. According to a manufacturing method of a display device according to another exemplary embodiment of the present invention, an additional opaque layer may be further formed in addition to the gate line 121 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , and the second source electrode 176 b and the second drain electrode 177 b , and in this case, the pixel defining layer 195 may be formed over this additional opaque layer as well. Referring to FIGS. 38 and 39 , an organic emission layer 370 is formed on that part of the first electrode 191 which is not covered by the pixel defining layer 195 . The organic emission layer 370 of the display device is formed in regions surrounded by the pixel defining layer 195 and is not formed over the pixel defining layer 195 . Accordingly, the organic emission layer 370 covers the entire pixel area except for the gate line 121 , the data line 171 , the driving voltage line 172 , the first gate electrode 154 a , the second gate electrode 154 b , the first source electrode 176 a and the first drain electrode 177 a , the second source electrode 176 b and the second drain electrode 177 b , and the like, which are formed as opaque layers. Next, as illustrated in FIGS. 8 and 9 , a second electrode 270 is formed on the pixel defining layer 195 and the organic emission layer 370 . As such, according to the manufacturing method of the display device according to the exemplary embodiment of the present invention, the first electrode 191 is formed throughout the pixel area, the pixel defining layer 195 is formed in areas over the opaque signal wire of the pixel area, the organic emission layer 370 is formed so as not to overlap the pixel defining layer 195 , and the second electrode 270 is formed on the organic emission layer 370 . Accordingly, as illustrated in FIGS. 8 and 9 , the organic emission layer 370 emits light in a first region R1, a second region R2, a fourth region R4, and a fifth region R5 which do not overlap the opaque wire layer, so as to display an image. As such, the organic emission layer 370 is formed even in regions which are not display areas in conventional display devices, and as a result, an emission area of the display device is increased. The pixel defining layer 195 is formed over only the opaque signal wires of the pixel area, not an opening region in the pixel area, and as a result, an aperture ratio of the display device is increased. As a result, by preventing the organic emission layer 370 from unnecessarily emitting light even in the region where the image is not displayed, it is possible to prevent reduction in emission efficiency while increasing an emission area of the display device. While this invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. The various features of each embodiment described herein can be mixed and matched with each other in any combination, to form embodiments and arrangements not shown herein but which would be understood by one of ordinary skill in the art. DESCRIPTION OF SYMBOLS 80, 8: Capacitor 81, 82: Contact hole 100: Substrate 120: Buffer layer 121: Gate line 135a: First semiconductor 135b: Second semiconductor 138: First capacitor electrode 140: Gate insulating layer 154a: First gate electrode 154b: Second gate electrode 158: Second capacitor electrode 160: First interlayer insulating layer 166a, 166b: Source contact hole 167a 167b: Drain contact hole 171: Data line 172: Driving voltage line 176a, 176b: Source electrode 177a, 177b: Drain electrode 178: Third capacitor electrode 180: Second interlayer insulating layer 191: First electrode 195: Pixel defining layer 270: Second electrode 370: Emission layer 1355a, 1355b: Channel region 1356a, 1356b: Source region 1357a, 1357b: Drain region

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (15)

    Publication numberPublication dateAssigneeTitle
    JP-4306142-B2July 29, 2009株式会社日立製作所画像表示装置及びその製造方法
    JP-4884864-B2February 29, 2012三菱電機株式会社Tftアレイ基板及びその製造方法、並びにこれを用いた表示装置
    KR-20110066808-AJune 17, 2011엘지디스플레이 주식회사Method of fabricating the array substrate for liquid crystal display device using a oxidized semiconductor
    KR-20120051727-AMay 22, 2012가부시키가이샤 한도오따이 에네루기 켄큐쇼Semiconductor device and manufacturing method thereof
    KR-20130003399-AJanuary 09, 2013엘지디스플레이 주식회사프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법
    KR-20130030650-AMarch 27, 2013엘지디스플레이 주식회사Method for fabricating thin film transistor array substrate
    US-2006125381-A1June 15, 2006Sang-Hun OhOrganic light emitting display device and method of fabricating the same
    US-2007222368-A1September 27, 2007Samsung Electronics Co., LtdDisplay device and method of manufacturing the same
    US-2011017999-A1January 27, 2011Hee-Dong ChoiArray substrate and method of fabricating the same
    US-2013009154-A1January 10, 2013Hee-Dong Choi, Seung-Joon JeonArray substrate for organic electroluminescent display device and method of fabricating the same
    US-2013069067-A1March 21, 2013Keun Chun YounOrganic light emitting diode (oled) display device and method for manufacturing the same
    US-2013187132-A1July 25, 2013Sony CorporationDisplay and method of manufacturing the same, unit, transfer printing method, organic electroluminescence unit and method of manufacturing the same, and electronic apparatus
    US-2014159018-A1June 12, 2014Boe Technology Group Co., Ltd.Array substrate, method for manufacturing the same, and display device
    US-7335919-B2February 26, 2008Samsung Sdi Co., Ltd.Active matrix organic electroluminescent display device including organic thin film transistor and method of manufacturing the display device
    WO-2011013522-A1February 03, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof

NO-Patent Citations (1)

    Title
    Extended European search report, Application No. 14172743.8-1555, dated Nov. 17, 2014.

Cited By (0)

    Publication numberPublication dateAssigneeTitle